Nimbus Brochure (PDF)
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Nimbus FAQs
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Nimbus Systems
1. What advantages does the Nimbus offer over other sputter deposition systems?
The Nimbus is a high throughput, low cost of ownership sputtering system capable of running different wafer sizes without venting the process chamber. The tool combines many of the features and capabilities of advanced cluster tools with the low cost and simplicity of an in-line system.
2. How many different targets can be installed in the process chamber?
Five different magnetrons, mounted on a pentagon, are available to install five different targets.
3. How are wafers handled in the Nimbus? What are the advantages of this approach?
Wafers are loaded on to wafer trays in a loadlock by a robot at atmosphere. The advantages of this approach are that multiple wafer sizes can be handled by simply changing the wafer trays, which are cycled out from the process chamber to the loadlock.
4. Can the Nimbus handle ultra-thin wafers? How does it do this?
Yes. The Nimbus handles ultra-thin wafers with a Bernoulli end effector.
5. What are the batch mechanical throughputs for 150 mm, 200 mm, and 300 mm wafers?
Mechanical throughputs for 150, 200 and 300 mm wafers are 54, 48 and 38 wafers per hour.
6. How long does it take to change wafer size and what is involved?
A wafer size change takes approximately one hour. The three wafer trays in the tool are cycled out through the loadlock and replaced with three new trays of the appropriate size. The etch shield may need to be changed, depending on the etch configuration (universal etch shield or wafer size specific etch shield).
7. What is the deposition non-uniformity (per system specifications) within a wafer and wafer-to-wafer?
The deposition non-uniformity is < 5% [(Max-Min)/2*Mean] both within a wafer and wafer-to-wafer.
8. Is reactive sputtering available on the Nimbus?
Yes. A wide range of oxide and nitride processes have been developed on the Nimbus.
9. How is film stress controlled in the Nimbus?
Film stress is controlled in the Nimbus by varying the degree of energetic particle bombardment during sputtering. Tensile stress is reduced by increasing bombardment, through RF bias of substrates. Compressive stress is reduced, by sputtering at high pressures, which decreases bombardment of the film during deposition.
10. Is phase-in deposition possible?
Yes. Phase-in of Cr/Cu (C4 process) has been demonstrated on the Nimbus.
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