Cirrus Brochure (PDF)
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Cirrus FAQs
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Cirrus Systems
1. What advantages does ECR deposition offer?
The ECR high-density plasma source with low ion energy used in Cirrus tools enables low temperature (<100 °C) deposition of dense films. SiN can be deposited using N2 instead of NH3 due to the efficiency of dissociation, reducing the hydrogen content in films.
2. What advantages does ECR etch offer?
The ECR high-density plasma source with low ion energy (controlled by wafer biasing) used in Cirrus tools reduces the potential for device damage when etching compound semiconductors.
3. What is the maximum wafer size, which can be processed in Cirrus tools?
The Cirrus 150 handles wafers up to 150 mm in diameter. The Cirrus 300 can handle 300 mm wafers.
4. Can etch and deposition be performed in the same tool?
Yes. However, NEXX Systems recommends the use of dedicated systems for etch and deposition in order to avoid cross-contamination issues.
5. What uniformity can be achieved on films deposited in Cirrus tools?
The plasma non-uniformity is ± 5% over 150 mm and 300 mm diameters at the wafer plane in the Cirrus 150 and Cirrus 300 tools, respectively.
6. How many different gases can be used in Cirrus tools?
The standard gas panel for both the Cirrus 150 and the Cirrus 300 has up to eight (8) mass flow controllers.
7. Can different wafer sizes and pieces of wafers be used for deposition and etch in Cirrus tools?
All wafer sizes less than 150 and 300 mm can be processed in the Cirrus 150 and Cirrus 300 tools, respectively. A pallet option is also available if irregular shapes and sizes of wafers are
routinely processed.
8. What is a typical deposition rate for a high quality SiN film deposited in the Cirrus tool?
NEXX Systems provides standard SiN processes at 200, 500 and 1000 Angstroms per minute deposition rate.
9. What are typical etch rates for InP and GaAs?
Etch rates of 5,000 Angstroms/minute of GaAs (using Cl2/BCl3) and 10,000 Angstroms/minute of InP (using Cl2/CH4/H2) have been demonstrated on Cirrus tools.
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